S. Blonkowski: search on Z-Library

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1

Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors

E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 175 KB

english, 2005

2

Study of reaction coupling and interfacial kinetics at semiconductor electrodes by band edge shift measurements

P. Allongue, S. Blonkowski, D. Lincot

Journal:

Journal of Electroanalytical Chemistry and Interfacial Electrochemistry

Year:

1991

Language:

english

File:

PDF, 1.24 MB

english, 1991

3

Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications

Maurice Kahn, Christophe Vallée, Emmanuel Defay, Catherine Dubourdieu, Marceline Bonvalot, Serge Blonkowski, Jean-Raoul Plaussu, Pierre Garrec, Thierry Baron

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 206 KB

english, 2007

4

Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors

F. Mondon, S. Blonkowski

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 282 KB

english, 2003

5

MIM capacitance variation under electrical stress

C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 139 KB

english, 2003

6

Studies on the pozzolanic and hydraulic properties of fly ashes in model systems

B. Pacewska, G. Blonkowski, I. Wilińska

Journal:

Journal of Thermal Analysis and Calorimetry

Year:

2008

Language:

english

File:

PDF, 375 KB

english, 2008

7

Electrical Characterization of Advanced MIM Capacitors With Insulator for High-Density Packaging and RF Applications

Bertaud, T., Bermond, C., Blonkowski, S., Vallee, C., Lacrevaz, T., Farcy, A., Gros-Jean, M., Flechet, B.

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Year:

2012

Language:

english

File:

PDF, 1.56 MB

english, 2012

8

Using Statistics of Extremes for Electromigration and Time-Dependent Dielectric Breakdown

Blonkowski, S., Bana, F., Ney, D.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2014

Language:

english

File:

PDF, 905 KB

english, 2014

9

Investigation and modeling of the electrical properties of metalâoxideâmetal structures formed from chemical vapor deposited Ta[sub 2]O[sub 5] films

Blonkowski, S., Regache, M., Halimaoui, A.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 670 KB

english, 2001

10

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Foissac, R., Blonkowski, S., Kogelschatz, M., Delcroix, P., Gros-Jean, M., Bassani, F.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 869 KB

english, 2013

11

Corrosion of III–V compounds; a comparative study of GaAs and InP: II. Reaction scheme and influence of surface properties

P. Allongue, S. Blonkowski

Journal:

Journal of Electroanalytical Chemistry and Interfacial Electrochemistry

Year:

1991

Language:

english

File:

PDF, 1.44 MB

english, 1991

12

Corrosion of III-V compounds; a comparative study of GaAs and InP: Part I. Electrochemical characterization based on Tafel plot measurements

P. Allongue, S. Blonkowski

Journal:

Journal of Electroanalytical Chemistry and Interfacial Electrochemistry

Year:

1991

Language:

english

File:

PDF, 1.44 MB

english, 1991

13

Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros-Jean, S. Blonkowski

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 813 KB

english, 2010

14

SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

P. Delcroix, S. Blonkowski, M. Kogelschatz, M. Rafik, O. Gourhant, D. JeanJean, R. Beneyton, D. Roy, X. Federspiel, F. Martin, X. Garros, H. Grampeix, R. Gassilloud

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 573 KB

english, 2011

15

Investigations of the influence of different fly ashes on cement hydration

B. Pacewska, G. Blonkowski, I. Wilińska

Journal:

Journal of Thermal Analysis and Calorimetry

Year:

2006

Language:

english

File:

PDF, 1.07 MB

english, 2006

16

Investigations of cement early hydration in the presence of chemically activated fly ash

Barbara Pacewska, I. Wilińska, G. Blonkowski

Journal:

Journal of Thermal Analysis and Calorimetry

Year:

2008

Language:

english

File:

PDF, 318 KB

english, 2008

17

Experimental investigation of charge transfer at the semiconductor/electrolyte junction

Philippe Allongue, Serge Blonkowski, Eliane Souteyrand

Journal:

Electrochimica Acta

Year:

1992

Language:

english

File:

PDF, 2.36 MB

english, 1992

18

Influence of the doping concentration on the electrochemical etching of semiconductors

P. Allongue, S. Blonkowski

Journal:

Electrochimica Acta

Year:

1993

Language:

english

File:

PDF, 722 KB

english, 1993

19

An attempt to improve the pozzolanic activity of waste aluminosilicate catalyst

Barbara Pacewska, I. Wilińska, M. Bukowska, G. Blonkowski, Wiesława Nocuń-Wczelik

Journal:

Journal of Thermal Analysis and Calorimetry

Year:

2004

Language:

english

File:

PDF, 1.12 MB

english, 2004

20

Non-linear dielectric properties of metal–amorphous-tantalum pentoxide–metal structures

S. Blonkowski, M. Regache, A. Halimaoui

Journal:

Journal of Non-Crystalline Solids

Year:

2002

Language:

english

File:

PDF, 213 KB

english, 2002

21

In situ microwave characterisation of medium-k hfo2 and high-k srtio3 dielectrics for metal-insulator-metal capacitors integrated in back-end of line of integrated circuits

Vo, T.T., Lacrevaz, T., Bermond, C., Bertaud, T., Flechet, B., Farcy, A., Morand, Y., Blonkowski, S., Torres, J., Guigues, B., Defay, E.

Journal:

IET Microwaves Antennas & Propagation

Year:

2008

Language:

english

File:

PDF, 436 KB

english, 2008

22

Statistics of electrical breakdown field in HfO[sub 2] and SiO[sub 2] films from millimeter to nanometer length scales

Sire, Cédric, Blonkowski, Serge, Gordon, Michael J., Baron, Thierry

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 481 KB

english, 2007

23

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - 28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

Benoist, A., Blonkowski, S., Jeannot, S., Denorme, S., Damiens, J., Berger, J., Candelier, P., Vianello, E., Grampeix, H., Nodin, J. F., Jalaguier, E., Perniola, L., Allard, B.

Year:

2014

Language:

english

File:

PDF, 1.05 MB

english, 2014

24

Organic Grafting on Si for Interfacial SiO 2 Growth Inhibition During Chemical Vapor Deposition of HfO 2

Dusciac, Dorin, Brizé, Virginie, Chazalviel, Jean-Noël, Lai, Yun-Feng, Roussel, Hervé, Blonkowski, Serge, Schafranek, Robert, Klein, Andreas, Henry de Villeneuve, Catherine, Allongue, Philippe, Ozanam

Journal:

Chemistry of Materials

Year:

2012

Language:

english

File:

PDF, 2.65 MB

english, 2012

25

Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors

Bertaud, T., Blonkowski, S., Bermond, C., Vallee, C., Gonon, P., Gros-Jean, M., Flechet, B.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 352 KB

english, 2010

26

[IEEE 2009 IEEE International Integrated Reliability Workshop (IRW) - South Lake Tahoe, CA, USA (2009.10.18-2009.10.22)] 2009 IEEE International Integrated Reliability Workshop Final Report - Capacitance variation under electrical stress of SiOCH low-k dielectrics for the advanced 45nm technology node and beyond

Vilmay, M., Roy, D., Blonkowski, S., Volpi, F., Chaix, J-M.

Year:

2009

Language:

english

File:

PDF, 576 KB

english, 2009

27

[IEEE IEEE International Interconnect Technology Conference - Burlingame, CA, USA (2-4 June 2003)] Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) - MIM HfO/sub 2/ low leakage capacitors for eDRAM integration at interconnect levels

Mazoyer, P., Blonkowski, S., Mondon, F., Farcy, A., Torres, J., Reimbold, G., Martin, F., Damlencourt, J.-F., Morand, Y., Bicais, N., Descombes, S.

Year:

2003

Language:

english

File:

PDF, 194 KB

english, 2003

28

Metal–insulator–metal capacitors using Y[sub 2]O[sub 3] dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition

Durand, C., Vallée, C., Loup, V., Salicio, O., Dubourdieu, C., Blonkowski, S., Bonvalot, M., Holliger, P., Joubert, O.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2004

Language:

english

File:

PDF, 441 KB

english, 2004

29

films

Blonkowski, S., Defay, E., Biquard, X.

Journal:

Physical Review B

Year:

2009

Language:

english

File:

PDF, 460 KB

english, 2009

30

A relationship between statistical time to breakdown distributions and pre-breakdown negative differential resistance at nanometric scale

Foissac, R., Blonkowski, S., Kogelschatz, M., Delcroix, P.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.14 MB

english, 2014

31

Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling

N. Ben Hassine, D. Mercier, P. Renaux, G. Parat, S. Basrour, P. Waltz, C. Chappaz, P. Ancey, S. Blonkowski

Year:

2009

Language:

english

File:

PDF, 945 KB

english, 2009

32

Pre-breakdown negative differential resistance in thin oxide film: Conductive-atomic force microscopy observation and modelling

Delcroix, P., Blonkowski, S., Kogelschatz, M.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 958 KB

english, 2011

33

Filamentary model of dielectric breakdown

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 745 KB

english, 2010

34

Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 262 KB

english, 2007

35

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - New insight on high-k/metal gate reliability modeling for providing guidelines for process development

Rafik, M., Ribes, G., Mora, P., Blonkowski, S., Federspiel, X., Caubet, P., Gaumer, C., Grosjean, M., Roy, D.

Year:

2013

Language:

english

File:

PDF, 502 KB

english, 2013

36

Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

Durand, C., Vallée, C., Dubourdieu, C., Kahn, M., Derivaz, M., Blonkowski, S., Jalabert, D., Hollinger, P., Fang, Q., Boyd, I. W.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2006

Language:

english

File:

PDF, 390 KB

english, 2006

37

[IEEE 2007 Asia-Pacific Microwave Conference - (APMC 2007) - Bangkok, Thailand (2007.12.11-2007.12.14)] 2007 Asia-Pacific Microwave Conference - In-situ Microwave Characterization of Medium-k HfO2 and High-k STO Dielectrics for MIM Capacitors Integrated in Back-End of Line of IC

Vo, T.T., Lacrevaz, T., Flechet, B., Farcy, A., Morand, Y., Blonkowski, S., Torres, J., Defay, E.

Year:

2007

Language:

english

File:

PDF, 2.53 MB

english, 2007

38

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Voltage pulse stress effect on gate stack TDDB distributions at nanometric scale: Consequence on aging by ESD

Foissac, R., Blonkowski, S., Gros-Jean, M., Kogelschatz, M.

Year:

2014

Language:

english

File:

PDF, 734 KB

english, 2014

39

[IEEE 2014 IEEE 6th International Memory Workshop (IMW) - Taipei, Taiwan (2014.5.18-2014.5.21)] 2014 IEEE 6th International Memory Workshop (IMW) - Effect of SET temperature on data retention performances of HfO2-based RRAM cells

Cabout, T., Vianello, E., Jalaguier, E., Grampeix, H., Molas, G., Blaise, P., Cueto, O., Guillermet, M., Nodin, J. F., Pemiola, L., Blonkowski, S., Jeannot, S., Denorme, S., Candelier, P., Bocquet, M.

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

40

Atomic Vapour Deposition (AVD™) Process for High Performance HfO22 Dielectric Layers

Cosnier, V., Dabertrand, K., Blonkowski, S., Lhostis, S., Zoll, S., Morand, Y., Descombes, S., Guillaumot, B., Hobbs, C., Rochat, N., Rolland, G., Renault, O., Garros, X., Cassé, M., Mitard, J., Lehne

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 146 KB

english, 2004

41

Bipolar resistive switching from liquid helium to room temperature

Blonkowski, S, Cabout, T

Journal:

Journal of Physics D Applied Physics

Year:

2015

Language:

english

File:

PDF, 3.90 MB

english, 2015

42

[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance

Sousa, V., Navarro, G., Castellani, N., Coue, M., Cueto, O., Sabbione, C., Noe, P., Perniola, L., Blonkowski, S., Zuliani, P., Annunziata, R.

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

43

Nanoscale Characterization of High-K/IL Gate Stack TDDB Distributions After High-Field Prestress Pulses

R. Foissac, S. Blonkowski, M. Kogelschatz

Year:

2015

Language:

english

File:

PDF, 1.70 MB

english, 2015

44

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Coupling the Phase-Field Method with an electrothermal solver to simulate phase change mechanisms in PCRAM cells

Cueto, Olga, Sousa, Veronique, Navarro, Gabriele, Blonkowski, Serge

Year:

2015

Language:

english

File:

PDF, 1.53 MB

english, 2015

45

Effect Of Trapping On Dielectric Conduction Mechanisms Of ULK/Cu Interconnects

Verrière, Virginie, Guedj, Cyril, Roy, David, Blonkowski, Serge, Sylvestre, Alain

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 665 KB

english, 2009

46

[IEEE 2016 IEEE International Memory Workshop (IMW) - Paris, France (2016.5.15-2016.5.18)] 2016 IEEE 8th International Memory Workshop (IMW) - Fully Analytical Compact Model of OxRAM Based on Joule Heating and Electromigration for DC and Pulsed Operation

Blonkowski, S., Cabout, T., Azazz, M., Cagli, C., Jalaguier, E.

Year:

2016

Language:

english

File:

PDF, 3.24 MB

english, 2016

47

[IEEE 2016 IEEE International Memory Workshop (IMW) - Paris, France (2016.5.15-2016.5.18)] 2016 IEEE 8th International Memory Workshop (IMW) - High Operating Temperature Reliability of Optimized Ge-Rich GST Wall PCM Devices

Kluge, J., Navarro, G., Sousa, V., Castellani, N., Blonkowski, S., Annunziata, R., Zuliani, P., Perniola, L.

Year:

2016

Language:

english

File:

PDF, 3.46 MB

english, 2016

48

[IEEE 2016 IEEE International Memory Workshop (IMW) - Paris, France (2016.5.15-2016.5.18)] 2016 IEEE 8th International Memory Workshop (IMW) - N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory

Navarro, G., Sousa, V., Noe, P., Castellani, N., Coue, M., Kluge, J., Kiouseloglou, A., Sabbione, C., Persico, A., Roule, A., Cueto, O., Blonkowski, S., Fillot, F., Bernier, N., Annunziata, R., Borghi

Year:

2016

Language:

english

File:

PDF, 4.59 MB

english, 2016

49

Fabrication of planar back end of line compatible HfOx Complementary Resistive Switches

Labalette, Marina, Jeannot, Simon, Blonkowski, Serge, Beilliard, Yann, Ecoffey, Serge, Souifi, Abdelkader, Drouin, Dominique

Journal:

IEEE Transactions on Nanotechnology

Year:

2017

Language:

english

File:

PDF, 2.08 MB

english, 2017

50

[IEEE 2017 17th Non-Volatile Memory Technology Symposium (NVMTS) - Aachen (2017.8.30-2017.9.1)] 2017 17th Non-Volatile Memory Technology Symposium (NVMTS) - Innovative GeS2/Sb2Te3 based phase change memory for low power applications

Kluge, Julia, Verdy, Anthonin, Navarro, Gabriele, Blonkowski, Serge, Sousa, Veronique, Chevalliez, Sophie, Kowalczyk, Philippe, Bernard, Mathieu, Bernier, Nicolas, Bourgeois, Guillaume, Castellani, Ni

Year:

2017

Language:

english

File:

PDF, 447 KB

english, 2017

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